VRF152 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET
The VRF152 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
VRF152
50V, 150W, 175MHz
M174
FEATURES
• Improved Ruggedness V_(BR)DSS = 130V
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• 30:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Low Rds Replacement for MRF151/ BLF177/ SD2941
• RoHS Compliant
Maximum Ratings
Symbol
V_DSS
I_D
V_GS
P_D
T_STG
T_J
Parameter
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Device dissipation @ T_C = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: T_C =25°C unless otherwise specified
VRF152
Unit
130
V
20
A
±40
V
300
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
V_(BR)DSS
R_DS(ON)
I_DSS
I_GSS
g_fs
V_GS(TH)
Parameter
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 50mA)
Drain-Source On-State Resistance ¹ (V_GS = 10V, I_D = 10A)
Zero Gate Voltage Drain Current (V_DS = 100V, V_GS = 0V)
Gate-Source Leakage Current (V_DS = ±20V, V_DS = 0V)
Forward Transconductance (V_DS = 10V, I_D = 5A)
Gate Threshold Voltage (V_DS = 10V, I_D = 100mA)
Min
Typ
Max Unit
130
V
0.13 0.20 Ohms
50
μA
1.0
μA
5.0
6.2
mhos
2.9
3.6
4.4
V
Thermal Characteristics
Symbol
Characteristic
R_θJC
Junction to Case Thermal Resistance
Min
Typ
Max Unit
0.60 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com