VRF151E Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET
The VRF151E is a thermally-enhanced version of the VRF151. It is a gold-
metallized silicon n-channel RF power transistor designed for broadband
commercial and military applications requiring high power and gain without
compromising reliability, ruggedness, or inter-modulation distortion.
VRF151E
50V, 150W, 175MHz
M174A
FEATURES
• Enhanced Package for 30% higher P_D
• Improved Ruggedness V_(BR)DSS = 170V
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• 30:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Replacement for SD2931-10 w/higher BV
• RoHS Compliant
Maximum Ratings
Symbol
V_DSS
I_D
V_GS
P_D
T_STG
T_J
Parameter
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Device dissipation @ T_C = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: T_C =25°C unless otherwise specified
VRF151E
Unit
170
V
16
A
±40
V
390
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
V_(BR)DSS
V_DS(ON)
I_DSS
I_GSS
g_fs
V_GS(TH)
Parameter
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 100mA)
On State Drain Voltage (I_D(ON) = 10A, V_GS = 10V)
Zero Gate Voltage Drain Current (V_DS = 100V, V_GS = 0V)
Gate-Source Leakage Current (V_DS = ±20V, V_DS = 0V)
Forward Transconductance (V_DS = 10V, I_D = 5A)
Gate Threshold Voltage (V_DS = 10V, I_D = 100mA)
Min
Typ
Max Unit
170
180
V
2.0
3.0
1
mA
1.0
μA
5.0
mhos
2.9
3.6
4.4
V
Thermal Characteristics
Symbol
Characteristic
R_θJC
Junction to Case Thermal Resistance
Min
Typ
Max Unit
0.45 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com