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| VRF141_10 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET | |||
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VRF141
VRF141MP
28V, 150W, 175MHz
RF POWER VERTICAL MOSFET
The VRF141 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
⢠Improved Ruggedness V(BR)DSS = 80 V
⢠150W with 22dB Typical Gain @ 30MHz, 28V
⢠150W with 13dB Typical Gain @ 175MHz, 28V
⢠Excellent Stability & Low IMD
⢠Common Source Conï¬guration
⢠Available in Matched Pairs
⢠30:1 Load VSWR Capability at Speciï¬ed Operating Conditions
⢠Nitride Passivated
⢠Refractory Gold Metallization
⢠High Voltage Replacement for MRF141
⢠RoHS Compliant
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: TC =25°C unless otherwise speciï¬ed
VRF141(MP)
Unit
80
V
20
A
±40
V
300
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 10A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 60V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 5A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Dynamic Characteristics
Symbol
Parameter
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 28V
f = 1MHz
Min
Typ
Max Unit
80
V
0.9
1.0
1.0
mA
1.0
μA
5.0
mhos
2.9
3.6
4.4
V
Min
Typ
Max Unit
0.60 °C/W
Min
Typ
Max
Unit
400
375
pF
50
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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