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| VRF141G Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET | |||
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RF POWER VERTICAL MOSFET
The VRF141G is designed for broadband commercial and military applications
at frequencies to 175MHz. The high power, high gain, and broadband perfor-
mance of this device make possible solid state transmitters for FM broadcast
or TV channel frequency bands.
VRF141G
28V, 300W, 175MHz
FEATURES
⢠Improved Ruggedness V(BR)DSS = 80V
⢠300W with 14dB Typical Gain @ 175MHz, 28V
⢠Excellent Stability & Low IMD
⢠Common Source Conï¬guration
⢠RoHS Compliant
⢠5:1 Load VSWR Capability at Speciï¬ed Operating Conditions
⢠Nitride Passivated
⢠Refractory Gold Metallization
⢠High Voltage Replacement for MRF141G
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: TC =25°C unless otherwise speciï¬ed
VRF141G
Unit
80
V
40
A
±40
V
500
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 10A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 60V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 5A)
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min
Typ
Max Unit
80
90
V
.9
1.0
1.0
mA
1.0
μA
5.0
mhos
2.9
3.6
4.4
V
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Min
Typ
Max
0.35
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
°C/W
Microsemi Website - http://www.microsemi.com
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