UPS840E3 Datasheet, PDF (1/3 Pages) Microsemi Corporation – POWERMITE 3™ SURFACE MOUNT 8 AMP 40 V SCHOTTKY RECTIFIER

SCOTTSDALE DIVISION
UPS840e3
POWERMITE 3™ SURFACE MOUNT
8 AMP 40 V SCHOTTKY RECTIFIER
DESCRIPTION
APPEARANCE
The UPS840e3 offers a small and powerful surface mount package that is
RoHS compliant for a 40 Volt 8 Amp rated Schottky. These ratings are found
only in much larger packages. They are ideal for surface mount applications
that operate at high frequencies with their “hot carrier” features that provide
extremely fast switching. The very low thermal resistance of the patented
Powermite 3™ package design with a full metallic bottom and unique locking
tab act as an efficient heat path to a heat sink mounting permitting cooler operating
junction temperatures for minimal reverse leakage currents and lower power
loss. It is also ideal for automatic insertion equipment.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Powermite 3™
FEATURES
APPLICATIONS / BENEFITS
• Low profile package (<1.1 mm)
• Small footprint area of 32 mm² (4.826 x 6.604 mm) or
0.05 in² (0.190 x 0.260 inches) as also shown in
mounting pad details on last page
• Plastic package has Underwriters Laboratory
Flammability classification 94V-0
• Unique locking tab on bottom acts as integral efficient
heat path to heat sink (mounting substrate)
• Metal to silicon rectifier, majority carrier conduction
• RoHS compliant with e3 suffix part number
• High current capability with low forward voltage
• Guard-ring-die construction for transient protection
• Silicon Schottky (hot carrier) rectifier for minimal t_rr
and minimal reverse recovery voltage
• Elimination of reverse-recovery oscillations to
reduce need for EMI filtering
• For use in high-frequency switching power supplies,
inverters, free wheeling, charge pump circuits and
polarity protection applications
• Lower forward power loss and high efficiency
• Low inductive parasitics (<2nH) for minimal Ldi/dt
effects
• Robust package configuration for pick-and-place
handling
• Full-metallic bottom eliminates flux entrapment
MAXIMUM RATINGS
• Storage temperature (T_STG): -55 ^oC to +150^oC
• Operating junction temperature (T_J ): -55 ^oC to +125^oC
• Average forward rectified current (I_O) @T_C=100^oC: 8.0
Amps
• Forward surge current (I_FSM) 8.3 ms single half-sine
waveform superimposed on rated load (JEDEC
Method): 150 Amps
• Thermal resistance (R_θJC): 2.5 ^oC/W
• Thermal resistance (R_θJA): 65 ^oC/W on PCB with FR4
using 2 oz Copper and recommended mounting pad size
(see pad layout next page)
• Typical junction capacitance (C_J) at 1.0 MHz and V_R of
4.0 Volts: 700 pF
• Solder temperatures: 260 ^ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• Terminals: Copper with annealed matte-Tin plating
for RoHS compliance solderable per MIL-STD-750
method 2026 (consult factory for Tin-Lead plating.)
• Polarity: Two-leads on side are internally
connected together for anode and backside is
cathode
• Marking: Body marked with S840•
• Molded epoxy package meets UL94V-0
• Weight: 0.072 grams (approximate)
• Tape & Reel packaging per EIA-481-2 with 16 mm
tape and 5000 units/ 13 inch reel)
• See package dimensions on last page
Copyright © 2007
10-15-07 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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