UM9701_06 Datasheet, PDF (1/7 Pages) Microsemi Corporation – Low Resistance, Low Distortion, RF Switching PIN Diode

UM9701
Low Resistance, Low Distortion, RF Switching PIN
Diode
DESCRIPTION
The UM9701 PIN diode was designed for
low resistance at low forward bias current
and low reverse bias capacitance. This
unique Microsemi design results in both
forward and reverse bias.
These PIN diodes are characterized for
low current drain RF and microwave
switch applications particularly for digital
filter switch designs. The construction
and geometry of these devices provide
good voltage and power handling
capability.
These devices are constructed using a
metallurgical full face bond to both
surfaces of the silicon chip. A glass
enclosure houses this bond in a reliable and
hermetic package. The axial leads are
attached to refractory pins and do not touch
the glass enclosure.
Environmentally these, and all Microsemi
PIN diodes, can withstand thermal cycling
from -195 °C to + 300 °C and exceed all
military environmental specifications for
shock, vibration, acceleration, and moisture
resistance.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Reverse Voltage
AVERAGE Power Dissipation
Free Air at 25 °C
Average Power Dissipation
½ “ (12.7 mm) Total lead Length
to 25 °C Contacts
V_R
100
Volts
P_A
500
mW
2.5
P_A
Derate linearly Watts
To 175 °C
Storage Temperature
T stg
-65 to 175
ºC
Operating Temperature
T op
-65 to 175
ºC
KEY FEATURES
ƒ Specified low distortion
ƒ Low Forward Resistance
ƒ High Reverse Resistance
ƒ High Voltage Capability
ƒ Good Power Handling
ƒ Microsemi Ruggedness and reliability
ƒ Compatible with automatic insertion
equipment
APPLICATIONS/BENEFITS
ƒ Little or no Bias required.
ƒ Available in leaded or surface mount
packages.
ƒ RoHS compliant packaging available: use
UMX9701B, etc.
Copyright  2001
Rev. 0.02, 2006-04-27
Microsemi
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