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UM9601_06 Datasheet, PDF (1/16 Pages) Microsemi Corporation – FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C OS O S
AND MICROWAVE APPLICATIONS
DESCRIPTION
Description
The UM9601-UM9608 series of PIN diodes
was developed for shunt mount applications in
microstrip circuits. Good switch performance
is demonstrated at frequencies from UHF to 4
GHz and higher. This performance is achieved
using discrete low inductance Microsemi PIN
diodes assembled with special hardware to
permit good electrical and mechanical
compatibility with microstrip transmission
lines.
Design information is presented for
preparation of microstrip circuit boards to
accommodate these PIN diodes. A detailed
design for a 900 MHz quarter-wave antenna
switch is given. This switch which employs a
low cost UM9401 axial leaded PIN diode in
conjunction with a UM9601 performs with 30
dB receiver isolation over a 100 MHz
bandwidth and with a transmitter insertion
loss of less than 0.4 dB. This switch can safely
handle transmitter power levels up to 100
watts at infinite SWR.
The Microsemi UM9601 series PIN diodes are
constructed using a fused-in-glass which results in
a highly reliable, hermetic package. The process
utilizes symmetrical, full faced metallurgical
bonds to both surfaces of the silicon chip. This
construction greatly minimizes the normal
parasitic inductance and capacitance found in
conventional glass or ceramic packaged diodes
which employ straps, springs, or whiskers.
The use of discrete UM9601-UM9608 diodes
greatly minimizes handling problems commonly
associated with passivated PIN diode chips while
maintaining good microwave performance. In
addition the power handling capability of the
UM9601-UM9608 series is considerably higher
than PIN diode chips can provide.
Environmentally, the UM9601-9608 series PIN
diodes can withstand thermal cycling from -195 oC
to +300 oC and exceed all military environmental
specifications for shock, vibration, acceleration,
and moisture.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Low Inductance Shunt Mount
Package
ƒ Characterized for Microstrip
ƒ Microsemi Ruggedness and
Reliability
ƒ High Power Handling Capability
ƒ Low Bias Current Requirement
ƒ Excellent Distortion Properties
ƒ Cost Effective in High Quantity
Applications
APPLICATIONS/BENEFITS
ƒ RoHS compliant packaging
available: use UMX9601, etc.
Typical Microwave Performance
UM9601-9604
UM9605-UM9608
SPST
SPST
SPNT*
SPST
SPST
SPNT*
Insertion Loss Isolation
Isolation Insertion Loss Isolation Isolation
Frequency
0 Bias
100 mA
100 mA
0 Bias
100 mA 100 mA
GHz
dB
dB
dB
dB
dB
dB
0.5
0.20
30
36
0.20
25
31
1.0
0.25
26
32
0.20
22
28
1.5
0.35
22
28
0.20
20
26
2.0
0.50
18
24
0.25
17
22
3.0
1.00
15
21
0.25
15
21
4.0
1.50
13
19
0.40
14
20
* Performance based on SPST Measurements in 0.025” (0.635mm) Microstrip Test Circuit.
Note: All dimensions in inches and (millimeters).
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 1