UM2100_05 Datasheet, PDF (1/9 Pages) Microsemi Corporation – ATTENUATOR AND POWER PIN DIODES (2-30 MHz)

UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
DESCRIPTION
UM2100 Series PIN diodes are designed for
transmit/receive switch and attenuator
applications in HF band (2-30MHz) and
below. As series configured switches, these
long lifetime (25µs typical) diodes can
control up to 2.5 kW, CW in a 50 ohm
system. In HF band, insertion loss is less
than 0.25dB and isolation is greater than
32dB (off-state).
The UM2100 series offers the lowest
distortion performance in both the transmit
and receive modes. Less than 50 mA
forward bias is requires to obtain an IP3 of
60 dBm at 300 kHz with 1 watt per tone. The
forward biased resistance/reactance vs. frequency
characteristics are flat down to 10 kHz. The
capacitance vs. reverse bias voltage characteristic
is flat down to 2 MHz.
In attenuator configuration, the UM2100
produces extremely low distortion at low values
of attenuator control current, and very low
insertion loss (0.2dB) in the “0dB” attenuator
state.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
Package
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Condition
PD
θ
A
B&E
C
D
SM
25 ^OC Pin Temperature
½ in. total length to 25 ^OC Contact
Free Air
25 ^OC Stud Temperature
25 ^OC Stud Temperature
25 ^OC End Cap Temperature
25 W
12 W
2.5 W
25 W
18.75 W
15W
6 ^OC/W
12.5 ^OC/W
6 ^OC/W
8 ^OC/W
10 ^OC/W
All 1 us pulse (Single)
OPERATING AND STORAGE
TEMPERATURE RANGE
100 kW
-65 ^OC to + 175 ^OC
KEY FEATURES
ƒ HF band (2-30 MHz) PIN
ƒ Long Lifetime (25µs typical)
ƒ High Power ( 1kW, CW)
ƒ High Isolation (32dB)
ƒ Low Loss (0.25dB)
ƒ Very Low Distortion (IP3=60dBm)
ƒ Voltage ratings to 1000 V
APPLICATIONS/BENEFITS
ƒ Isolated stud package available
ƒ Surface mount package available
ƒ RoHS compliant packaging
available: use UMX2101B, etc.
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100V
200V
400V
600V
800V
1000V
UM2101
UM2102
UM2104
UM2106
UM2108
UM2110
Copyright  2005
Rev. 0, 2005-12-13
Microsemi
Page 1