TCS1200_09 Datasheet, PDF (1/4 Pages) Microsemi Corporation – 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz

TCS1200
1200 Watts, 53 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
The TCS1200 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for TCAS applications. The device has gold thin-film metalization and
emitter ballasting for proven highest MTTF. The transistor includes input and
output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55TU-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
2095 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
65 V
3.5 V
60 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
P_out
P_g
η_c
R_L
Tr
Pd
VSWR
Power Out
Power Gain
Collector Efficiency
Return Loss
Rise Time
Pulse Droop
Load Mismatch Tolerance¹
Pulse Width = 32µs
Duty Factor = 2%
F = 1030 MHz, V_cc = 53 Volts
Pin = 115 Watts
1200
10.2
45
-10
2.5:1
W
dB
%
dB
100
ns
0.5
dB
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 40 mA
Ic = 100 mA
Vce = 5V, Ic = 1A
3.5
V
65
V
20
0.012 °C/W
Rev B April, 2009
NOTES: 1. At rated output power and pulse conditions
2. See plots below for Mode S data at 50V as well as the standard 32us,2% data at 53V
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
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