TAN500 Datasheet, PDF (1/5 Pages) Microsemi Corporation – 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz

TAN500
500 Watts, 50 Volts
Pulsed Avionics 960 to 1215 MHz
GENERAL DESCRIPTION
The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed
for pulsed systems in the frequency band 960-1215 MHz. The device has gold
thin-film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55ST Style 1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P_d)
2500 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
65 V
3.0 V
50 A
Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
BV_ebo
BV_ces
h_FE
θjc^1,2
CHARACTERISTICS
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
TEST CONDITIONS
Ie = 30 mA
Ic = 50 mA
Ic = 1A, Vce = 5V
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
Power Out
P_in
Power Input
G_p
Power Gain
η_c
Collector Efficiency
P_d
Pulse Droop
T_r1
Rise Time
F = 960/1090/1215 MHz
VCC = 50V
PW = 10µs, DF = 10%
P_in = 63W
?á
Load Mismatch
NOTES: 1. At rated output power, pulse conditions and MSC fixture
2. Pulse Format: PW=10µs, DF=10%
Rev. B – May. 2008
MIN
3.0
75
20
TYP
0.07
MAX
UNITS
V
V
-
°C/W
MIN
500
9.0
40
TYP
110
MAX
63
0.5
3:1
UNITS
W
W
dB
%
dB
ns
-
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