TAN250A Datasheet, PDF (1/4 Pages) Advanced Semiconductor – RF POWER TRANSISTOR

TAN250A
250 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN250A is a high powered COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55AW, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
575 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
60 V
4.0 V
30 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
P_in
P_g
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 20 μsec
DF = 5%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
Emitter to Base Breakdown
BV_ces
Collector to Emitter Breakdown
h_FE
DC – Current Gain
θjc²
Thermal Resistance
NOTE 1: At rated output power and pulse conditions
2. At rated pulse conditions
.
Revision A, August 2010
Ie = 20 mA
Ic = 25 mA
Vce = 5V, Ic = 1 A
MIN
250
6.2
TYP
7.0
40
MAX
60
5:1
UNITS
W
W
dB
%
4.0
V
60
V
10
.3 °C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our website at www.microsemi.com or contact our factory direct
Microsemi Corporation 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031