TAN150 Datasheet, PDF (1/3 Pages) GHz Technology – 150 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

TAN150
150 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN150 is a high powered COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55AT, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
583 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
55 V
3.5 V
15.0 A
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
P_in
P_g
η_c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 20 µsec
DF = 5%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 10 mA
Ic = 50 mA
Vce = 5V, Ic = 1 A
MIN
150
7.0
TYP
38
MAX
30
10:1
UNITS
W
W
dB
%
3.5
V
55
V
10
0.3 °C/W
NOTE 1: At rated output power and pulse conditions
.
Rev A: Updated June 2009
MICROSEMI. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Microsemi: 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120