SG6100 Datasheet, PDF (1/3 Pages) Microsemi Corporation – DIODE ARRAY CIRCUITS

SG6100/SG6511
SG6101/SG6510
DIODE ARRAY CIRCUITS
DESCRIPTION
The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic,
high breakdown, fast switching speed diode arrays. The SG6100/SG6511
is configured with 7 straight through diodes, while the SG6101/SG6510 has
8 straight through diodes.
These two diode array configurations allow the designer maximum flexibility
for circuit design and board layout. Since each diode within the array has
individual anode and cathode connections the device may be used in a
variety of applications. Also, due to the array's monolithic construction the
diode electrical parameters are very closely matched.
Both devices are available in ceramic DIP and flatpack and can be processed
to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.
FEATURES
• 75V minimum breakdown voltage
• 100mA current capability per diode
• Switching speeds less than 5ns
• Low leakage current < 25nA
HIGH RELIABILITY FEATURES
♦ MIL-S-19500/474 QPL - 1N6100
- 1N6101
- 1N6510
- 1N6511
♦ Equivalent JANS, JANTXV, JANTX, JAN
screening available
CIRCUIT DIAGRAMS
6/91 Rev 1.1 2/94
Copyright © 1994
7 - STRAIGHT THROUGH DIODES
SG6100/SG6511
8 - STRAIGHT THROUGH DIODES
SG6101/SG6510
LINFINITY Microelectronics Inc.
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