SD1224-02 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS

RF AND MICROWAVE TRANSISTORS
VHF FM APPLICATIONS
SD1224-02
Features
• 175 MHz
• 28 VOLTS
• CLASS C
• COMMON EMITTER
• EFFICIENCY 60% MIN.
• P_OUT = 40 W MIN.
• G_P = 7.6 dB GAIN
DESCRIPTION:
The SD1224-02 is an epitaxial silicon NPN planar transistor designed
primarily for 28 V FM Class C RF amplifiers utilized in ground station
transmitters. This device utilizes ballasted emitter resistors and
improved metallization systems to achieve optimum load mismatch
capability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_CES
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(j-c) Junction-Case Thermal Resistance
Value
Unit
65
V
35
V
65
V
4.0
V
5.0
A
60
W
+200
°C
-65 to +150
°C
2.9
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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