SD1127 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
VHF COMMUNICATIONS
Features
• DESIGNED FOR VHF MILITARY AND COMMERCIAL
EQUIPMENT
• 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN
• GROUNDED EMITTER CONFIGURATION
SD1127
DESCRIPTION:
THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR
ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A
BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED
EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25ºC)
Symbol
P_DISS
Parameter
Total Power Dissipation *
V_CBO
Collector-base Voltage
V_CEO
Collector-emitter Voltage (I_B=0)
I_C
Collector Current *
T_STG
Storage Temperature
T_J
Junction Temperature
*At RF Conditions
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
)
Value
8.0
36
18
0.64
-65 to 200
200
21.9
Unit
W
V
V
A
ºC
ºC
°C/W
MSC0936.PDF 10-15-98