SD1019_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF AND MICROWAVE TRANSISTORS VHF APPLICATIONS

RF AND MICROWAVE TRANSISTORS
VHF APPLICATIONS
Features
• 136 MHz
• 13.5 V
• COMMON EMITTER
• P_OUT = 30 W MIN.
• GAIN = 4.5 dB
SD1019
DESCRIPTION:
The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor
designed primarily for VHF communications.
It uses nichrome aluminum metallization to achieve infinite VSWR at
rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_DISS
Total Power Dissipation
T_stg
Storage Temperature
T_j
Junction Temperature
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance
Rev. B – June 2008
Value
65
35
4
9
117
-65 to +150
+200
1.7
Unit
V
V
V
A
W
°C
°C
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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