PPNGZ52F120A Datasheet, PDF (1/3 Pages) Microsemi Corporation – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

PPC INC.
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: [phone]
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: PPNH(G)Z52F120B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (PPNHZ52F120A only)
PPNGZ52F120A
PPNHZ52F120A
TO-258
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T_J ≥ 25°C
Collector-to-Gate Breakdown Voltage @ T_J ≥ 25°C, R_GS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25°C
Tj= 90°C
Peak Collector Current (pulse width limited by T_jmax,)
Tj= 25°C
Tj= 90°C
Avalanche energy (single pulse) @ I_C= 25A, V_CC= 50V, L= 200µH,
R_G= 25Ω, Tj= 25°C
Short circuit current (SOA) , V_CE≤ 1200V, T_J= 150°C, t_sc≤ 10µs
Short circuit (reverse) current (RBSOA) , V_CE≤ 1200V, T_J= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, PPNHZ52F120A only)
Pulse Source Current (Body Diode, PPNHZ52F120A only)
Thermal Resistance, Junction to Case
BV_CES
BV_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM(25)
I_CM(90)
E_AS
I_C(sc)
I_C(sc)RBSOA
P_D
T_j
T_stg
I_S
I_SM
θ_JC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.42
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
Datasheet# MSC1376.PDF