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| MXP415-C Datasheet, PDF (1/1 Pages) Microsemi Corporation – Photo Transistor Chip | |||
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
Photo Transistor Chip
Features
⢠Light Activated Photo Transistor Chip
⢠Planar NPN
⢠Aluminum Wire bondable
⢠Backside Metallization - Gold
⢠Die Attach methods: Eutectic or Epoxy
Electrical Characteristics @ 25oC
SYMBOL
CHARACTERISTIC
CONDITIONS
BVCEO
BVEBO
BV
CBO
VCESAT
ID
hFE
Collector-Emitter Voltage
IC = 100 µA
Emitter-Base Voltage
IE = 100 µA
Collector-Base Voltage
I
C
=
100
µA
Collector-Emitter Saturation IC = 1.0 mA, IB = 40 µA
Collector Current
VCE = 10 Volts
Beta
VCE = 5 Volts, IB = 4 µA
MXP415-C
MIN
30
4
40
2,000
TYP
MAX
350
90
UNITS
Volts
Volts
Volts
mVolts
nAmps
Data Sheet # MSC1342.PDF
Updated:October 1998
Opto Products
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