MXP4005 Datasheet, PDF (1/2 Pages) Microsemi Corporation – InGaAs/InP PIN Photo Diode

OPTO-ELECTRONIC PRODUCTS
Obsolete Product – not recommended for new design
MXP4005 – 12.7 Gbps
InGaAs/InP PIN Photo Diode
PRODUCTION DATA SHEET
DESCRIPTION
Microsemi’s InGaAs/InP PIN Photo The MXP400X series of photo
Diode chips are ideal for high bandwidth diodes are currently offered in die
1310nm and 1550nm optical networking form allowing manufacturers the
applications.
versatility of custom assembly
The device series offers superior noise configurations.
performance and sensitivity due to their This device is ideal for manu-
planar construction and passivation.
facturers of optical receivers,
transponders, optical transmission
modules and combination PIN photo
diode – transimpedance amplifier.
Microsemi will assemble die on
submounts and custom confi-
gurations.
KEY FEATURES
ƒ High Responsivity
ƒ Low Dark Current
ƒ Extremely Low Capacitance
ƒ 12GHz , High Bandwidth
ƒ Custom Sub-mounts
ƒ Large 40um Bond Pad
APPLICATIONS
ƒ 1310nm CATV Optical Applications
ƒ 1550nm DWDM Optical Applications
ƒ SONET/SDH (FEC), ATM
ƒ 10Gigabit Ethernet, Fibre Channel
ƒ 10Gbps NRZ or RZ modulation
ƒ Optical Test equipment
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
BENEFITS
ƒ Planar passivation
ƒ Low Contact Resistance
PRODUCT HIGHLIGHT
Typical Spectral Responsivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
800 900 1000 1100 1200 1300 1400 1500 1600 1700
Wavelength (nm)
508um
± 25um
MXP4
Ø 40um ±
Bond
45
508um
± 25um
Active Area
20um
MICROS
Anod
150
± 20um
508um
± 25um
Copyright © 2001
Rev. 1.1
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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