MXP4000 Datasheet, PDF (1/1 Pages) Microsemi Corporation – InGaAs/InP PIN Photodiode Chips

OPTO ELECTRONIC PRODUCTS
PRELIMINARY
MXP4000 Series
InGaAs/InP PIN Photodiode Chips
PRODUCT PREVIEW
DESCRIPTION
Microsemi’s InGaAs/InP PIN
The MXP4000 series of
Photodiode chips are ideal for wide
bandwidth 1310nm and 1550nm
optical networking applications.
photodiodes are originally offered in
die form for manufacturers of optical
transponders, supervisory VCSEL
The four devices offered feature
excellent dark current ratings of 1-3
monitoring circuits, and combination
PIN Photodiode-transimpedance
amplifier hybrids.
nA, and a breakdown voltage of 20
Volts with the bandwidth options for
156 Mb/sec (active area of 300um²),
622 Mb/sec (active area of 200 um²),
2.5 Gb/sec (active area of 75 um²),
10 Gb/sec (active area of 40 um²),
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"Low Dark Current
!"Extremely low capacitance
!"Wide bandwidth
!"Fast response time
APPLICATIONS/BENEFITS
!"1310nm Fiber Optic
Applications
!"1550nm Fiber Optic
Applications
!"Optical Transponders
Item
Active Area(Dia.)
Photo Sensitive
Area
Detection Range
Responsivity
Responsivity
Dark Current
Capacitance
Rise/Fall Time
Bandwidth
Breakdown
Voltage
Chip Size
Bonding Pad
Size
Sym
Res
Res
I_D
C
t_r/t_f
VB
PART RATINGS AND CHARACTERISTICS
MXP4000
MXP4001
MXP4002
MXP4003
300
200
75
40
0.9
0.9
10
5.0
2 ns
0.156
20
0.020 x 0.020
100
0.85
0.9
4
2
0.5 ns
0.622
20
0.020 x 0.020
100
0.8
0.9
0.5
0.5
100 ps
2.5
20
0.8
0.9
0.2
0.2
20 ps
10
20
0.014 x 0.014 0.014 x 0.014
40
40
Unit
µm
A/W
A/W
nA
pF
Gb/Sec
V
Inches
um x um
Test Condition
—
—
Resp. @ 1300nm
Resp. @ 1550nm
V_R @-5V
I_R @10uA
Copyright  2000
MSC1639.PDF 2000-12-12
Microsemi
Opto Electronics Products Group
2830 S. Fairview Street, Santa Ana, CA 92704, [phone] Fax [phone]
http://www.microsemi.com/opto
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