MXP3000 Datasheet, PDF (1/1 Pages) Microsemi Corporation – GaAs PIN Photodiode Chips

OPTO ELECTRONIC PRODUCTS
MXP3000 Series
GaAs PIN Photodiode Chips
PRODUCT PREVIEW
DESCRIPTION
Microsemi’s GaAs PIN
The MXP3000 series of
Photodiode chips are ideal for wide photodiodes are originally offered in
bandwidth 850nm optical
die form for manufacturers of
networking applications.
photodiode modules, supervisory
pump laser circuits, and combination
The five devices offered feature
PIN Photodiode-transimpedance
excellent dark current ratings of 1-3 amplifier hybrids.
nA, and a breakdown voltage of 20
Volts with the bandwidth options for
1.4 GHz (active area of 250 mm²),
1.75 GHz(active area of 200 mm²), 5
GHz (active area of 100 mm²), 7 GHz
(active area of 60 mm²), and 8.75
GHz (active area of 30 mm²),
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"Low Dark Current
!"Extremely low capacitance
!"Wide bandwidth
!"Fast response time
APPLICATIONS/BENEFITS
!"850nm Fiber Optic
Applications
Item
Active Area(Dia.)
Photo Sensitive Area
Detection Range
Responsivity
Dark Current
Capacitance
Rise/Fall Time
Bandwidth
Breakdown Voltage
Chip Size
Bonding Pad Size
Sym
—
—
R
Idark
C
tr/tf
VB
Part Ratings and Characteristics
MXP3001 MXP3002 MXP3003 MXP3004
30
60
100
200
0.0007
0.0028
0.0078
0.0314
850
850
850
850
0.45
0.45
0.45
0.45
1
1
1
2
0.3
0.4
0.6
1.5
40
50
70
200
8.75
20
350 x 350
40 x 100
7
20
350 x 350
40 x 100
5
20
350 x 350
100
1.75
20
500 x 500
100
MXP3005
250
0.0491
850
0.45
3
2
250
1.4
20
500 x 500
100
Unit
mm2
mm2
Nm
A/W
nA
pF
ps
GHz
um x um
um x um
Test Condition
—
—
VR=-5V, l = 850nm
VR=-5V
VR=-5V
VR=-5V, @ 850nm
VR=-5V, @ 850nm
IR=10uA
Copyright  2000
MSC1592.PDF 2000-10-16
Microsemi
Opto Electronics Products Group
2830 S. Fairview Street, Santa Ana, CA 92704, [phone] Fax [phone]
http://www.microsemi.com/opto
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