MXP1158 Datasheet, PDF (1/1 Pages) Microsemi Corporation – Phototransistor Optocoupler

2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: [phone]
Phototransistor Optocoupler
MXP 1158
Features
NC
2
• 2,500 Volt electrical isolation
5
• Standard 8-pin DIP package
• High current transfer ratio for low IF
• Screening similar to JANTX, JANTXV or
3
JANS equivalent
6
Description
• The MXP1158 consists of a light emitting diode and an NPN phototransistor.
• The device is available in a hermetic 8-pin DIP package.
Electrical Characteristics @ 25^oC
SYMBOL
IC(on)
VCEsat
BVceo
BVebo
ICE(off)
VF
IR
tR
tF
CHARCTERISTIC
On-State Collector Current
Saturation Voltage
Breakdown Voltage
Breakdown Voltage
Off-State Leakage Current
Input Forward Voltage
Input Reverse Current
Rise Time
Fall Time
CONDITIONS
IF = 1 mA, VCE = 5 Volts
IF = 2 mA, IC = 1.0 mA
IC = 1.0 mA
Ieb = 100 uA
VC = 20 Volts
IF = 10 mA
VR = 2.0 V
VCC = 10 Volts, RL = 100 Ohms
IF = 5 mA
Min
1.0
40
7
100
1.0
100.0
Max UNITS
8.0 mAmps
0.3 Volts
Volts
Volts
nAmps
Volts
uAmps
20 usec
20 usec
Absolute Maximum Ratings
LED Input Diode
8
7
6
5
Reverse Voltage
Forward Voltage
Peak Forward Current
Power Dissipation
Input to Output Isolation
Storage Temperature Range
Operating Temperature Range
2.0 Vdc minimum @ IR = 10 uA
1.95 Vdc maximum @ IF = 100 mA
1.0 Amp @ 1 msec pulse width
200 mW
+/- 2,500 Vdc
-65 C to +150 C
-55 C to +125 C
1
2
3
4
Data Sheet # MSC1334.PDF
Updated: September 1999
Opto Products