MXP1144P Datasheet, PDF (1/4 Pages) Microsemi Corporation – PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps

MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS, 1.0 Amps
PRODUCT PREVIEW
DESCRIPTION
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Oxide passivated structure for
very low leakage currents
ƒ Epitaxial structure minimizes
forward voltage drop
ƒ Triangular shape to fit in corner
near flat of photovoltaic cell
ƒ Forward voltage decreases with
radiation exposure
ƒ Targeted for terrestrial
applications with silicon
photovoltaic cells
ƒ Thin construction for fit with
photovoltaic cells
APPLICATIONS/BENEFITS
ƒ Increases efficiency of
photovoltaic arrays
ƒ Protects photovoltaic cells from
reverse voltage
ƒ
MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)
DESCRIPTION
SYMBOL
MAX.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
Junction Temperature Range
Storage Temperature Range
V_RRM
V_RWM
V_R
I_F(ave)
T_j
T_stg
50
50
50
1.0
-65 to +150
-65 to +200
UNIT
Volts
Volts
Volts
Amps
°C
°C
DESCRIPTION
Reverse (Leakage)
Current (in dark)
Forward Voltage
pulse test, pw= 300 µs
Junction Capacitance
Breakdown Voltage
ELECTRICAL PARAMETERS
SYMBOL CONDITIONS
IR₂₅
VR= 4 Vdc, Ta= 25°C
IR₂₅
VR= 50 Vdc, Ta= 25°C
VF1
IF= 400 mA, Ta= 25°C
VF2
IF= 1.0 A, Ta= 25°C
Cj1
VR= 4 Vdc
BVR
IR= 200 µA, Ta= 25°C
MIN
50
TYP.
10
20
750
770
1050
60
MAX
200
775
800
1300
UNIT
nA
nA
mV
mV
pF
V
Copyright © 2002
MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: [phone]
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