MXP1126-C Datasheet, PDF (1/1 Pages) Microsemi Corporation – Photo Transistor Chip

2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: [phone]
Photo Transistor Chip
Features
• Light Activated Photo Transistor Chip
• Planar NPN
• Aluminum Wire bondable
• Backside Metallization - Gold
• Die Attach methods: Eutectic or Epoxy
Electrical Characteristics @ 25^oC
SYMBOL
CHARACTERISTIC
BV_CEO
BV_EBO
BV_CBO
ID
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector Current
h_FE
Beta
CONDITIONS
I_C = 100 µA
I_E = 100 µA
I_C = 100 µA
V
CE
=
10
Volts
V_CE = 5 Volts, I_C = 1 mA
MXP1126-C
MIN
TYP
MAX
UNITS
500
Volts
20
Volts
500
Volts
30
nAmps
25
Data Sheet # MSC1341.PDF
Updated:October 1998
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