MX043J Datasheet, PDF (1/4 Pages) Microsemi Corporation – RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
Features
• Harris FSC260R die
• total dose: 100 kRAD(Si) within pre-radiation parameter limits
• dose rate: 3 x 10⁹ RAD(Si)/sec @ 80%BV_DSS typical
• dose rate: 2 x 10¹² RAD(Si)/sec @ ID ≤ IDM typical
• neutron: 10¹³ neutrons/cm² within pre-radiation parameter limits
• photocurrent: 17 nA/RAD(Si)/sec typical
• rated Safe Operating Area Curve for Single event Effects
• rugged polysilicon gate cell structure with ultrafast body diode
• low inductance surface mount power package available with “J-leads”
(MX043J) or “gullwing-leads” (MX043G)
• very low thermal resistance
• reverse polarity available upon request add suffix “R”st
Maximum Ratings @ 25°C (unless otherwise
s_Dp_Ee_Sc_Ci_Rfi_Ie_Pd_T)_ION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T_J ≥ 25°C
Drain-to-Gate Breakdown Voltage @ T_J ≥ 25°C, R_GS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj= 100°C
Peak Drain Current, pulse width limited by T_Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Weight
MX043J
MX043G
200 Volts
44 Amps
50 mΩ
RADIATION
HARDENED
SEGR-RESISTANT
N-CHANNEL
ENHANCEMENT
MODE
POWER MOSFET
SYMBOL
BV_DSS
BV_DGR
V_GS
V_GSM
I_D25
I_D100
I_DM
I_AR
E_AR
E_AS
P_D
T_j
T_stg
I_S
I_{S M}
θ_JC
-
MAX.
200
200
+/-20
+/-30
44
28
132
44
tbd
tbd
300
-55 to +125
-55 to +125
44
132
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
grams
SINGLE EVENT Ion Species typical LET (MeV/mg/cm)
EFFECTS
Ni
26
SAFE
Br
37
OPERATING
Br
37
AREA
Br
37
(SEESOA)
Br
37
Notes
(1) Pulse test, t ≤ 300 µ s, duty cycle δ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0857
typical range (µ)
43
36
36
36
36
VGS
-20V
-5V
-10V
-15V
-20V
VDSmax
200V
200V
160V
100V
40V