MWS11 Datasheet, PDF (1/6 Pages) Microsemi Corporation – InGaP HBT Gain Block

A MICROSEMI COMPANY
CONFIDENTIAL
MWS11-GB11-xx
InGaP HBT Gain Block
PREVIEW


This general purpose amplifier is a low This RFIC amplifier is initially
cost, broadband RFIC manufactured with available in a plastic SOT-89 3-Pin
an InGaP/GaAs Heterojunction Bipolar package to handle P1dB output power up
Transistor (HBT) process (MOCVD). to 19dBm (5V). The same RFIC will be
This RFIC amplifier was designed as an available later in an advanced Microsemi
easily cascadable 50 ohm gain block. The Gigamite™ package, with significantly
device is self-contained with 50 ohm input smaller footprint for applications where
and output impedance. Applications in- board space is at a premium.
clude IF and RF amplification in wireless/
wired voice and data communication
products and broadband test equipment
operating up to 6 GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
 

Advanced InGaP HBT

DC to 6GHz

Single +5V Supply

Small Signal Gain = 16dB

P1dB = 19dBm (5V),
f=1GHz

SOT-89 3-Pin, & Gigamite
Packages
  

Broadband Gain Blocks

IF or RF buffer Amplifiers

Driver Stage for Power
Amps

Final Power Amp for Low to
Medium Power Applications

Broadband Test Equipment

 
45
40
f = 5 .7 G H z
Vcc = 5 V
35
N o m in a l C u rre n t
30 ^{20 m A}
25
20
15
10
5
0
-5
-1 0
-2 0
-1 5
-1 0
-5
0
5
P in (d B m )
10
15
P out
G a in
C u rre n t
Copyright © 2000
Rev. 0.2,2000-12-15

    
Plastic SOT-89
PK _{3 Pin}
Gigamite
MWS11GB11-S1
MWS11GB11-G1
Note: Available in Tape & Reel.
Append the letter “T” to the part number. (i.e. MSW11GB11-S89T)
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: [phone]
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