MV39001 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GaAs VARACTORS TM Hyperabrupt Flip Chip Diodes

TM
®
GaAs VARACTORS
Hyperabrupt Flip Chip Diodes
MV39001 – MV39003
Dimensions
Size: 27.5 x 15 x 5 mils
Features
● _{High Q GaAs Material}
● _{1.0 and 1.25 Constant Gamma Varactors}
● _{Low Parasitic Capacitance (0.02 pF)}
● _{Large Gold Bond Pads (3.5 x 8.4 mils)}
● _{Silicon Nitride Protective Coating}
Maximum Ratings
Reverse Voltage
Power Dissipation
Operating Temperature
Storage Temperature
18 V
50 mW @ 25°C
-65°C to +150°C
-65°C to +150°C
Specifications @ 25°C
Part Number
MV39001-P2715
MV39002-P2715
MV39003-P2715
Gamma
±10%
1.00
1.25
1.25
C_T @ 4 V
(pF)
0.4–0.6
0.25–0.4
0.4–0.6
Description
Microsemi’s Flip Chip GaAs Varactors are designed
for use as tuning elements in VCOs, modulators and
tunable filters at microwave and millimeter wave
frequencies.
These Flip Chip Varactors incorporate our expertise
in GaAs material processing, silicon nitride
protective coating and high temperature
metallization. This flip chip design maintains the
high frequency performance of a beam lead
structure in a more rugged configuration.
C_T @2 V /
C_T @12 V
3.3–4.1
4.3–5.3
4.5–5.6
Min.
Q@4V
50 MHz
4000
4000
3500
Min.
Breakdown
Voltage
18 V @ 10 µA
18 V @ 10 µA
18 V @ 10 µA
Max.
Reverse
Current
100 nA @ 14.4 V
100 nA @ 14.4 V
100 nA @ 14.4 V
SPICE Model Parameters
I_S
R_S
C_P
C_JO (pF)
m
E_G
V_J
(A)
()
N
(pF) MV39001 MV39002 MV39003 MV39001 MV39002 MV39003 (ev) (V)
1E-14 A 0
1.0 0.02
2.0
1.8
2.8
1.0
1.25
1.25
1.42 1.2
B_V
IB_V
(V) (A)
18 1E-5 A
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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