MV30011 Datasheet, PDF (1/4 Pages) Microsemi Corporation – GaAs Varactor Diodes Hyperabrupt

TM
®
Features
● _{High Q Values for Higher Frequency Performance}
● _{Large Tuning Ratios}
● _{Low Reverse Current}
● _{Gamma Values to 1.5}
● _{Available as Bondable Chips and as}
Packaged Diodes
● _{Available in Chip-on-Board Packaging}
● _{Custom Designs Available}
Applications
● _VCOs
● _{Phase-Locked Oscillators}
● _{High Q Tunable Filters}
● _{Phase Shifters}
● _{Pre-Selectors}
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
Breakdown Voltage
50 mA @ 25°C
+20 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
GaAs Varactor Diodes
Hyperabrupt
MV30011 – MV34010
Description
Microsemi’s GaAs hyperabrupt junction varactor
diodes are fabricated from epitaxial layers grown
at Microsemi by the Chemical Vapor Deposition
technique. The layers are processed at using
proprietary techniques resulting in varactors with
constant gamma, high Q factor and repeatable
tuning curves. These varactors are available in a
variety of microwave ceramic packages or
bondable chips for operation from UHF to
millimeter wave frequencies.
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 _{The MS3000 Series of products are}
. supplied with a RoHS complaint Gold finish
Copyright  2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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