MV20001 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GaAs Varactor Diodes Abrupt Junction

TM
®
Features
● _{High Q Values for Higher Frequency Performance}
● _{Constant Gamma Design}
● _{Low Reverse Current}
● _{Available as Chip or Packaged Diodes}
● _{Available in Chip-on-Board Packaging}
● _{Custom Designs Available}
Applications
● _VCOs
● _{Phase-Locked Oscillators}
● _{High Q Tunable Filters}
● _{Phase Shifters}
● _{Pre-Selectors}
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
Breakdown Voltage
50 mA @ 25°C
+20 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
GaAs Varactor Diodes
Abrupt Junction
MV20001 – MV21010
Description
Microsemi’s GaAs abrupt junction varactors are
fabricated from epitaxial layers grown at
Microsemi using Chemical Vapor Deposition. The
layers are processed using proprietary techniques
resulting in a high Q factor and very repeatable
tuning curves. The diodes are available in a variety
of microwave ceramic packages or chips for
operation from UHF to millimeter wave
frequencies.
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 _{The MV20000 Series of products are}
. supplied with a RoHS complaint Gold finish
Copyright  2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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