MSICSN10120 Datasheet, PDF (1/4 Pages) Microsemi Corporation – SILICON CARBIDE SCHOTTKY POWER RECTIFIER

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
PRELIMINARY
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
SILICON CARBIDE
SCHOTTKY POWER RECTIFIER
DEVICES
MSiCSN10120
MSiCSS10120
MSiCST10120
10A / 1200V
Silicon Carbide
Schottky Rectifier
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Symbol
V_RWM
V_RSM
V_DC
Value
1200
1200
1200
Average Forward Current, 25°C
I_o
Peak Surge Forward Current @ t_p = 8.3ms, half sinewave,
I_o = 0; V_RM = 0
I_FSM
Thermal Resistance, Junction to Case
R_θjc
Thermal Resistance, Junction to Ambient
R_θja
Operating Junction Temperature
T_j
Storage Temperature
T_stg
10
50
-65°C to +225
-65°C to +225
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage*
I_F = 1A, T_j = 25°C
I_F = 2.5A, T_j = 25°C
I_F = 5.0A, T_j = 25°C
I_F = 10.0A, T_j = 25°C
Reverse Current
V_R = 1200V, T_j = 25°C
V_R = 1200V, T_j = 175°C
Symbol Min.
V_F
Max.
1.0
1.2
1.4
1.8
I_R
100
200
Junction Capacitance
V_R = 0V
f = 1MHz
C_j
1200
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
1. Derate linearly @ tbd
Unit
V
V
V
Apk
Apk
°C/W
°C/W
°C
°C
Unit
V
µA
pF
MSiCST10120
TO-39
MSiCSN10120
TO-257
MSiCSS10120
U-4
(SURFACE MOUNT: SMD.22)
T4-LDS-0110 Rev. 1 (091991)
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