MSICSN05120CC Datasheet, PDF (1/3 Pages) Microsemi Corporation – SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
PRELIMINARY
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
SILICON CARBIDE
DUAL SCHOTTKY POWER RECTIFIER
DEVICES
MSiCSN05120CC MSiCSN05120CA MSiCSN05120D
MSiCSS05120CC MSiCSS05120CA MSiCSS05120D
5A / 1200V
Silicon Carbide
Dual Schottky Rectifier
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Symbol
V_RWM
V_RSM
V_DC
Value
1200
1200
1200
Unit
V
V
V
Average Forward Current, 25°C
I_o
Peak Surge Forward Current @ t_p = 8.3ms, half sinewave,
I_o = 0; V_RM = 0
I_FSM
Thermal Resistance, Junction to Case
R_θjc
Thermal Resistance, Junction to Ambient
R_θja
Operating Junction Temperature
T_j
Storage Temperature
T_stg
5
30
-65°C to +225
-65°C to +225
Apk
Apk
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Forward Voltage*
I_F = 1A, T_j = 25°C
I_F = 2.5A, T_j = 25°C
I_F = 5.0A, T_j = 25°C
Reverse Current
V_R = 1200V, T_j = 25°C
V_R = 1200V, T_j = 175°C
Symbol Min. Max. Unit
V_F
1.2
1.6
V
1.8
I_R
50
µA
100
Junction Capacitance
V_R = 0V
f = 1MHz
C_j
500
pF
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
1. Derate linearly @ tbd
TO-257
MSiCSN05120 ____
U-3
(SURFACE MOUNT: SMD.5)
MSiCSS05120
•1 •2 •3
CC – COMMON CATHODE
•1 •2 •3
CA – COMMON ANODE
•1 •2 •3
D - DOUBLER
T4-LDS-0103 Rev. 1 (091990)
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