MSICSN05120 Datasheet, PDF (1/5 Pages) Microsemi Corporation – SILICON CARBIDE SCHOTTKY POWER RECTIFIER

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
SILICON CARBIDE
SCHOTTKY POWER RECTIFIER
DEVICES
MSiCSN05120
MSiCSX05120
MSiCSS05120
MSiCST05120
5A / 1200V
Silicon Carbide
Schottky Rectifier
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Peak Repetitive Reverse Voltage
V_RWM
1200
Surge Peak Reverse Voltage
V_RSM
1200
DC Blocking Voltage
V_DC
1200
Average Forward Current, 25°C
Peak Surge Forward Current @ t_p = 8.3ms, half
sinewave, I_o = 0; V_RM = 0
Thermal Resistance, Junction to Case
I_o
5
I_FSM
30
R_θjc
Thermal Resistance, Junction to Ambient
R_θja
Operating Junction Temperature
T_j
-65°C to +225
Storage Temperature
T_stg -65°C to +225
Note 1: Derate linearly @ tbd
Unit
V
V
V
Apk
Apk
°C/W
°C/W
°C
°C
MSiCST05120
TO-39
MSiCSN05120
TO-257
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Forward Voltage
I_F = 1A, T_j = 25°C*
I_F = 2.5A, T_j = 25°C*
I_F = 5.0A, T_j = 25°C*
Reverse Current
V_R = 1200V, T_j = 25°C
V_R = 1200V, T_j = 175°C
Junction Capacitance
V_R = 0V
f = 1MHz
V_F
1.2
1.6
V
1.8
I_R
50 µA
100
C_j
500 pF
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
MSiCSS05120
U-4
(SURFACE MOUNT: SMD.22)
MSiCSX05120
TO-257 (Tabless)
T4-LDS-0104 Rev. 2 (110340)
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