MSC1090M Datasheet, PDF (1/3 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025-1150 MHz
• GOLD METALLIZATION
• INPUT MATCHED
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• P_OUT = 90 W MINIMUM
• G_P = 8.4 dB
MSC1090M
DESCRIPTION:
The MSC1090M is a medium power Class C transistor designed
specifically for pulsed L-Band avionics applications. Low RF thermal
resistance and emitter ballasting ensure high reliability and product
consistency.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
P_DISS
V_CBO
Vces
Power Dissipation
Collector Base Voltage
Collector Emitter Voltage
220
W
65
V
65
V
Vebo
Emitter Base Voltage
3.5
V
T_J
Junction Temperature
200
ºC
I_C
T_STG
Device Current
Storage Temperature
5.52
A
-65 to +150
ºC
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
.8
°C/W
Revision A, January 2010
Microsemi reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at www.microsemi.com or contact our factory direct.