MSASC25W45K Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW LEAKAGE SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
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MSASC25W45K
(1N6816)
Features
• Tungsten schottky barrier
MSASC25W45KR
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
(1N6816R)
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6816) and reverse
45 Volts
25 Amps
polarity (strap-to-cathode: 1N6816R)
LOW LEAKAGE
Maximum Ratings @ 25°C (unless otherwise specified)
SCHOTTKY DIODE
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6816
1N6816R
SYMBOL
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
MAX.
45
45
45
25
(3.3)
125
2
-55 to +175
-55 to +175
1.25
1.35
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Datasheet# MSC1033A
Mechanical Outline
ThinKey™ 2