MSASC150H45A Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW VOLTAGE DROP SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
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FAX: [phone]
MSASC150H45A
Features
• Platinum/Tungsten schottky barrier for low forward voltage drop
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS)
screening i.a.w. Microsemi Internal Procedure PS 11.50 available
45 Volts
150 Amps
LOW VOLTAGE
DROP SCHOTTKY
DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
derating, forward current, Tc≥ 135°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
Mechanical Outline
SYMBOL
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
MAX.
45
45
45
150
(3.75)
500
2
-65 to +175
-65 to +175
0.25
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Datasheet# MSC0876.PDF