MSASC100W45H Datasheet, PDF (1/2 Pages) Microsemi Corporation – SURFACE MOUNT LOW LEAKAGE SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
Features
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, MSASC100W45H) and
reverse polarity (strap-to-cathode: MSASC100W45HR)
MSASC100W45H
MSASC100W45HR
Or
1N6791
45 Volts
100 Amps
SURFACE MOUNT
LOW LEAKAGE
SCHOTTKY DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
MSASC100W45H
MSASC100W45HR
SYMBOL
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
MAX.
45
45
45
100
3.3
500
2
-65 to +175
-65 to +175
0.35
0.5
Mechanical
Outline
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Datasheet# MSC0291A