MSASC100W100H Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW LEAKAGE SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
Features
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, MSASC100W100H)
and reverse polarity (strap-to-cathode: MSASC100W100HR)
MSASC100W100H
MSASC100W100HR
100 Volts
100 Amps
LOW LEAKAGE
SCHOTTKY DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
derating, forward current, Tc≥ 135°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
MSASC100W100H
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
MAX.
100
100
100
100
2.5
500
2
-65 to +175
-65 to +175
0.35
0.5
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
Datasheet# MSC0306A