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MSASC100H45H Datasheet, PDF (1/2 Pages) Microsemi Corporation – SURFACE MOUNT LOW VOLTAGE DROP SCHOTTKY DIODE | |||
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSASC100H45H
MSASC100H45HR
Features
⢠Tungsten/Platinum schottky barrier
⢠Oxide passivated structure for very low leakage currents
⢠Guard ring protection for increased reverse energy capability
⢠Epitaxial structure minimizes forward voltage drop
⢠Hermetically sealed, low profile ceramic surface mount power package
⢠Low package inductance
⢠Very low thermal resistance
⢠Available as standard polarity (strap-to-anode, MSASC100H45H) and
reverse polarity (strap-to-cathode: MSASC100H45HR)
45 Volts
100 Amps
SURFACE MOUNT
LOW VOLTAGE DROP
SCHOTTKY DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc⤠125°C
derating, forward current, Tc⥠125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
MSASC100H45H
MSASC100H45HR
SYMBOL
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
MAX.
45
45
45
100
4
500
2
-65 to +150
-65 to +150
0.35
0.5
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
Datasheet# MSC0292A
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