MSARS200S10L Datasheet, PDF (1/2 Pages) Microsemi Corporation – HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER

2830 S. Fairview St.
Santa Ana, CA 92704
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MSARS200S10L
Features
MSARS200S10LR
• passivated mesa structure for very low leakage currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, MSARS200S10L) and
reverse polarity (strap-to-cathode: MSARS200S10RL)
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
derating, forward current, Tc≥ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
MSARS200S10L
MSARS200S10LR
SYMBOL
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
T_j
T_stg
θ_JC
100 Volts
200 Amps
HIGH CURRENT
CAPABILITY &
LOW VOLTAGE
DROP STANDARD
RECOVERY
RECTIFIER
MAX.
UNIT
100
Volts
100
Volts
100
Volts
200
Amps
4
750
-55 to +200
-55 to +200
0.20
0.35
Amps/°C
Amps
°C
°C
°C/W
Mechanical Outline
ThinKey™ 3
Datasheet# MSC1037A