MSAGX75L60A Datasheet, PDF (1/2 Pages) Microsemi Corporation – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
MSAGX75L60A
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAGX75L60B
• low VCE(sat) IGBT, low conduction losses
600 Volts
75 Amps
1.8 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current, pulse width limited by T_jmax,
Safe Operating Area (RBSOA) @ VGE= 15V, L= 30µH (clamped inductive
load), RG= 2.7Ω, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
BV_CES
BV_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
I_max
P_D
T_j
T_stg
θ_JC
Mechanical Outline
MAX.
600
600
+/-20
+/-30
75
60
200
100
300
-55 to +150
-55 to +150
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Watts
°C
°C
°C/W
COLLECTOR
GATE
EMITTER
Datasheet# MSC0297A