MSAGA11F120D Datasheet, PDF (1/3 Pages) Microsemi Corporation – Fast IGBT Die for Implantable Cardio Defibrillator Applications

2830 S. Fairview Street
Santa Ana, CA 92704
Phone: [phone]
Fax: [phone]
DESCRIPTION:
• N-Channel enhancement mode high density IGBT die
• Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
• Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
• Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
• Low Forward Voltage Drop, Low Tail Current
• Avalanche and Surge Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix
MAXIMUM RATINGS:
MSAGA11F120D
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
55
35-50% of
ICM Max
10µs
4000µs
Time - µsec
SYMBOL
VCES
VCGR
VEG
VGE
IC1
IC2
ICM
ICM1
ICM2
ICsurge2
EAS
PD
TJ, TSTG
PARAMETER
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ )
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Surge Current (10µs x 4ms double exponential, see figure 2)
Pulsed Collector Current ¬ @ TC = 25°C
Pulsed Collector Current ¬ @ TC = 110°C
Surge Current: tp= 2 us (ton= 1.5 µs; toff= 0.5 µs to 50% decay), 10 pulses, duty
cycle= 1:2,500,000 (12 pulses/minute)
Single Pulse Avalanche Energy -
Total Power Dissipation
Operating and Storage: Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS:
SYMBOL CHARACTERISTIC / TEST CONDITIONS
BV_CES
RBV_CES
V_GE(TH)
V_CE (ON)
I_CES
I_GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 0.5mA)
Collector-Emitter Reverse Breakdown Voltage® (V_GE = 20V, I_C = 10mA)
Gate Threshold Voltage (V_CE = V_GE, I_C = 350µA, T_J = 37°C
Gate Threshold Voltage (V_CE = V_GE, I_C = 350µA, T_J = 25°C
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_J = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_J = 37°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_J = 125°C)
Collector Cut-off Current (V_CE = 80%V_CES, V_GE = 0V, T_J = 25°C)
Collector Cut-off Current (V_CE = 80%V_CES, V_GE = 0V, T_J = 37°C)
Collector Cut-off Current (V_CE = 80%V_CES, V_GE = 0V, T_J = 125°C)
Gate-Emitter Leakage Current (V_GE = ±25V, V_CE =0V)
Gate-Emitter Leakage Current (V_GE = ±25V, V_CE =0V), Tj= 37°C
MIN
1200
-15
4.5
VALUE
1200
1200
15
±20
22
11
55
44
22
400
10
125
-55 to 150
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Amps
Apk
mJ
Watts
°C
TYP MAX UNIT
Volts
Volts
5.7
Volts
5.5
6.5 Volts
3.1
3.5 Volts
3.5
Volts
4
4.5 Volts
0.02
10
uA
0.07
uA
1000
uA
2
±100
nA
4
nA
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified