MSAFX50N20A_11 Datasheet, PDF (1/3 Pages) Microsemi Corporation – N-Channel Enhancement Mode Power Mosfet

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
N-Channel Enhancement Mode
Power Mosfet
DEVICES
MSAFX50N20A
200 Volts
50 Amps
45 mΩ
FEATURES
¾ Ultrafast body diode
¾ Rugged polysilicon gate cell structure
¾ Increased Unclamped Inductive Switching (UIS) capability
¾ Hermetically sealed, surface mount power package
¾ Low package inductance
¾ Very low thermal resistance
¾ Reverse polarity available upon request
Table 1 – ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ T_J ≥ 25°C
Drain-to-Gate Breakdown Voltage @ T_J ≥ 25°C, R_GS = 1MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Peak Drain Current, pulse width limited by T_Jmax
T_J = 25°C
T_J = 100°C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ I_S ≤ I_DM, di/dt ≤ 100A /μs, V_DD ≤ V_DSS, T_J ≤ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Symbol
BV_DSS
BV_DGR
V_GS
V_GSM
I_D25
I_D100
I_DM
I_AR
E_AR
E_AS
Max.
200
200
+/-20
+/-30
50
40
200
50
30
TBD
Unit
V
V
V
V
A
A
A
mJ
mJ
dv/dt
5.0
V/ns
P_D
300
W
T_j
-55 to +150 °C
T_stg
-55 to +150 °C
I_S
50
A
I_SM
200
A
θ_JC
0.25
°C/W
T4-LDS-0203 Rev. 1 (110640)
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