MSAFX20N60A Datasheet, PDF (1/2 Pages) Microsemi Corporation – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
MSAFX20N60A
Features
• Ultrafast body diode
• Rugged polysilicon gate cell structure
• Increased Unclamped Inductive Switching (UIS) capability
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request
600 Volts
20 Amps
350 mΩ
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by T_Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
BV_DSS
BV_DGR
V_GS
V_GSM
I_D25
I_D100
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_j
T_stg
I_S
I_SM
θ_JC
600
600
+/-20
+/-30
20
15
80
20
30
tbd
5.0
300
-55 to +150
-55 to +150
20
80
0.25
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0303A