MSAFA75N10C Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SANTA ANA DIVISION
MSAFA75N10C
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
DESCRIPTION
New generation N-channel enhancement mode power MOSFET with
rugged polysilicon gate structure and fast switching intrinsic rectifier. The
very rugged Coolpack2^TM surface-mount package is lightweight, space
saving and hermetically sealed for high reliability and/or military/space
application.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
• Ultrafast body diode
• Increased Unclamped
Inductive Switching (UIS)
capability
• Hermetically sealed, surface
mount power package
• Very low package inductance
• Very low thermal resistance
• Reverse polarity available
upon request
APPLICATIONS/BENEFITS
• DC-DC converters
• Motor controls
• Uninterruptible Power
Supply(UPS)
• DC choppers
• Synchronous rectification
• Inverters
MAXIMUM RATINGS @ 25°C (unless otherwise specified)
Description
Symbol
Drain-to-Source Voltage (Gate Shorted to Source)
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Peak Drain Current, pulse width limited by T_Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy (3)
Total Power Dissipation @T_c=25°C
Junction Temperature Range
T_j= 25°C
T_j= 100°C
V_DSS
V_GS
V_GSM
I_D25
I_D100
I_DM
I_AR
E_AR
E_AS
P_D
Tj
Storage Temperature Range
T_stg
Continuous Source Current (Body Diode)
I_S
Pulse Source Current (Body Diode)
I_SM
Thermal Resistance, Junction to Case
θ_JC
Max.
100
+/-30
+/-40
75
60
300
75
30
1500
540
-55 to
+150
-55 to
+150
75
300
0.23
Unit
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
Copyright  2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: [phone]
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