MSAFA1N100P3 Datasheet, PDF (1/2 Pages) Microsemi Corporation – N-Channel enhancement mode high density

Santa Ana Division
MSAFA1N100P3
MOSFET Device
Features
• Low On-State resistance
• Avalanche and Surge Rated
• High Frequency Switching
• Ultra low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing “L” Suffix
• Available with “J” leads
Applications
• Implantable Cardio Defibrillator
Testing and Screening (per lot)
• 100% Testing at 25C, DC parameters
• Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits)
Maximum Ratings
1 Amp
1000 V
N-Channel
enhancement mode high
density
SYMBOL
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25
Continuous Drain Current @ TC = 100
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
VALUE
1000
±20
1
0.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
C
Static Electrical Characteristics
SYMBOL
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IDSS3
IGSS1
IGSS2
IGSS3
CHARACTERISTIC / TEST CONDITIONS
MIN TYP MAX UNIT
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
1000
Volts
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C)
3.4
Volts
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C)
2 3.5 4.5 Volts
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C)
12.5 13.5 ohm
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C)
12.5
ohm
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C)
11.5 14 ohm
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60C)
15
ohm
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C)
23.5
ohm
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C)
10 uA
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C)
1
uA
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C)
100 uA
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
±100 nA
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C
10
nA
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C
500 nA
2830 south Fairview Street, Santa Ana, CA 92704 USA [phone] FAX [phone]
Data Sheet # MSC
www.MICROSEMI.com
Updated: December 1999