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MSAFA1N100D_01 Datasheet, PDF (1/3 Pages) Microsemi Corporation – Fast MOSFET Die for Implantable Cardio Defibrillator Applications | |||
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2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax: (714) 559-5989
DESCRIPTION:
⢠N-Channel enhancement mode high density MOSFET die
⢠Passivation: oxynitride, 4um
⢠Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
⢠Backside Metallization: Ti â Ni (1 um) â Ag (0.2 um) for soft solder attach
FEATURES:
⢠Low On-state resistance
⢠Avalanche and Surge Rated
⢠High Freq. Switching
⢠Ultra Low Leakage Current
⢠UIS rated
⢠Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
MAXIMUM RATINGS:
SYMBOL PARAMETER
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current x @ TC = 25°C
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS:
SYMBOL CHARACTERISTIC / TEST CONDITIONS
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IDSS3
IGSS1
IGSS2
IGSS3
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37°C
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25°C
Drain â Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25°C)
Drain â Source On-State Resistance (VGS = 7V, ID = 5â¦150 mA, TJ= 37°C)
Drain â Source On-State Resistance (VGS = 7V, ID = 5â¦150 mA, TJ= 25°C)
Drain â Source On-State Resistance (VGS = 7V, ID = 5â¦150 mA, TJ= 60°C)
Drain â Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125°C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25°C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37°C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125°C)
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37°C
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125°C
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
VALUE
1000
±20
1
.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
°C
MIN TYP MAX UNIT
1000
Volts
3.4
Volts
2
3.5 4.5 Volts
12.5 13.5 ohm
12.5
ohm
11.5
ohm
15
ohm
23.5
ohm
10
uA
1
uA
100
uA
±100 nA
10
nA
500
nA
MSC1054.PDF 3/22/01
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
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