MSAFA1N100D Datasheet, PDF (1/3 Pages) Microsemi Corporation – Fast MOSFET Die for Implantable Cardio Defibrillator Applications

2830 S. Fairview Street
Santa Ana, CA 92704
Phone: [phone]
Fax: [phone]
DESCRIPTION:
• N-Channel enhancement mode high density MOSFET die
• Passivation: oxynitride, 4um
• Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
• Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
• Low On-state resistance
• Avalanche and Surge Rated
• High Freq. Switching
• Ultra Low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
MAXIMUM RATINGS:
SYMBOL PARAMETER
V_DSS
V_GS
I_D1
I_D2
I_DM1
I_AR
E_AR
E_AS
T_J, T_STG
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ T_C = 25° C
Continuous Drain Current @ T_C = 100° C
Pulsed Drain Current ¬ @ T_C = 25° C
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
VALUE
1000
±20
1
.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS:
SYMBO
L
BV_DSS
V_GS(TH)2
V_GS(TH)1
R_DS(ON)1
R_DS(ON)2
R_DS(ON)3
R_DS(ON)4
R_DS(ON)5
I_DSS1
I_DSS2
I_DSS3
I_GSS1
I_GSS2
I_GSS3
CHARACTERISTIC / TEST CONDITIONS
Drain - Source Breakdown Voltage (V_GS = 0V, I_D = 0.25mA)
Gate Threshold Voltage (V_GS= V_DS, I_D = 1 mA, T_J = 37° C
Gate Threshold Voltage (V_GS= V_DS, I_D = 1 mA, T_J = 25° C
Drain – Source On-State Resistance (V_GS = 10V, I_D = I_D1, T_J = 25° C)
Drain – Source On-State Resistance (V_GS = 7V, I_D = 5…150 mA_, T_J= 37° C)
Drain – Source On-State Resistance (V_GS = 7V, I_D = 5…150 mA_, T_J= 25° C)
Drain – Source On-State Resistance (V_GS = 7V, I_D = 5…150 mA_, T_J= 60° C)
Drain – Source On-State Resistance (V_GS = 7V, I_D = I_D1, T_J = 125° C)
Zero Gate Voltage Drain Current (V_DS = 80%BV_DSS, V_GS = 0V, T_J = 25° C)
Zero Gate Voltage Drain Current (V_DS = 80%BV_DSS, V_GS = 0V, T_J = 37° C)
Zero Gate Voltage Drain Current (V_DS = 80%BV_DSS, V_GS = 0V, T_J = 125° C)
Gate-Source Leakage Current (V_GS = ±20V, V_CE =0V)
Gate-Source Leakage Current (V_GS= ±20V V_CE =0V), Tj= 37°C
Gate-Source Leakage Current (V_GS= ±20V V_CE =0V), Tj= 125°C
MIN
1000
2
TYP
3.4
3.5
12.5
12.5
11.5
15
23.5
1
10
MAX
4.5
13.5
10
100
±100
500
UNIT
Volts
Volts
Volts
ohm
ohm
ohm
ohm
ohm
uA
uA
uA
nA
nA
nA
MSC1054.PDF 6/23/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T_C = 25°C unless otherwise specified