MSAER57N10A Datasheet, PDF (1/2 Pages) Microsemi Corporation – N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
MSAER57N10A
Features
• MOSKEY^{TM -} Mosfet and Schottky in a single package
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Increased Unclamped Inductive Switching (UIS) capability
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request (MSAER57N10AR)
• Available with TX/TXV-level screening (MSAER57N10AV) or S-level
screening (MSAER57N10AS) i.a.w. Microsemi internal procedure,
PS11.50
100 Volts
57 Amps
25 mΩ
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
+ SCHOTTKY
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T_J ≥ 25°C
Continuous Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj= 100°C
Peak Drain Current, pulse width limited by T_Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS, T_J ≤ 150°C
Power Dissipation @ T_C = 100°C
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
BV_DSS
V_GS
I_D25
I_D100
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_j
T_stg
I_S
I_SM
θ_JC
100
+/-20
57
40
180
28
15
200
5.0
215
-55 to +175
-55 to +175
57
360
0.7
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
DRAIN
GATE
Mechanical Outline
CoolPack^TM1
Note: Pin-out shown for
standard polarity
SOURCE
Revision 1