MS8350-P2819 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GaAs Schottky Diodes TM Low RS Series Pair

TM
®
Dimensions
Size: 28 x 19 mils
Thickness: 5 mils
Bond Pad Size: 5 x 5 mils
Features
● _{Capacitance (65 fF Typ.)}
● _{Low Series Resistance (3  Typ.)}
● _{Cut-Off Frequency > 500 GHz}
● _{Large Gold Bond Pads}
Specifications @ 25°C
(Per Junction)
● _{VF (1 mA): 650–750 mV}
● _{VF (1 mA): 10 mV Max.}
● _{RS (10 mA): 7  Max.}
● _{IR (3 V): 10 A Max.}
● _{CT (0 V): 80 fF Max.}
Maximum Ratings
Insertion Temperature
Incident Power
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
250°C for 10 Seconds
+20 dBm @ 25°C
15 mA @ 25°C
3V
-55°C to +125°C
-65°C to +150°C
GaAs Schottky Diodes
Low R_S Series Pair
MS8350 – P2819
Description
The MS8350 is a GaAs flip chip series pair
Schottky device designed for use as balanced mixer
elements at microwave and millimeter wave
frequencies. Their high cut-off frequency insures
good performance at frequencies to 100
GHz. Applications include, transceivers, digital
radios and automotive radar detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon
nitride protective coatings and high temperature
metalization. They have large, 5 x 5 mil, bond pads
for ease of insertion. The MS8350 is priced for
high volume commercial and industrial
applications
Copyright  2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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