MS8251-P2920 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GaAs Schottky Diodes Flip Chip Anti Parallel Low C

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®
Dimensions
Size: 26 x 13 mils
Thickness: 5 mils
Bond Pad Size: 5 x 8 mils
Features
● _{Capacitance (45 fF Typ.)}
● _{Low Series Resistance (7  Typ.)}
● _{Cut-Off Frequency > 500 GHz}
● _{Large Gold Bond Pads}
Specifications @ 25°C
(Per Junction)
● _{VF (1 mA): 600–800 mV}
● _{VF (1 mA): 10 mV Max.}
● _{RS (10 mA): 9  Max.}
● _{IR (3 V): 10 A Max.}
● _{CT (0 V): 60 fF Max.}
Maximum Ratings
Insertion Temperature
Incident Power
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
250°C for 10 Seconds
+20 dBm @ 25°C
15 mA @ 25°C
3V
-55°C to +125°C
-65°C to +150°C
GaAs Schottky Diodes
Flip Chip Anti Parallel Low C_T
MS8251 – P2920
Description
The MS8251-P2920 is a GaAs flip chip anti-parallel
pair Schottky device designed for use as harmonic
mixer elements at microwave and millimeter wave
frequencies. Their high cut-off frequency insures
good performance at frequencies to 100 GHz.
Applications include, transceivers, digital radios
and automotive radar detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon
nitride protective coatings and high temperature
metallization. They have large, 5 x 8 mil, bond
pads for ease of insertion. The MS8251-P2920 is
priced for high volume commercial and industrial
applications.
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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